GT1K2P15D5
Goford Semiconductor
XPQ1R00AQB,LXHQ
Part Number：
XPQ1R00AQB,LXHQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
100V UMOS10 L-TOGL 1.03MOHM
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Power Dissipation (Max) 750W (Tc)
- Operating Temperature 175°C
- Vgs(th) (Max) @ Id 3.5V @ 1.5mA
- Package / Case 8-PowerBSFN
- Supplier Device Package L-TOGL™
- Current - Continuous Drain (Id) @ 25°C 300A (Ta)
- Rds On (Max) @ Id, Vgs 1.03mOhm @ 150A, 10V
- Gate Charge (Qg) (Max) @ Vgs 269 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 21450 pF @ 10 V
