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AMELH5050S-R22MT Datasheet: Measured Specs & Limits
Date: 2026-05-05 10:28:15 Source: Browse: 0

Independent lab and bench measurements converge on a clear point: this part delivers very low DCR and high current capability in a compact 5.5 × 5.3 × 5.1 mm shielded package.

Below, the article follows datasheet definitions, reproduces measured trends engineers see on the bench, and gives repeatable test methods, a worked VRM example, and concrete derating and PCB rules to predict in‑system performance reliably.

1 — Product overview & key nominal specs

AMELH5050S-R22MT Datasheet: Measured Specs & Limits

Nominal electrical and mechanical specs

INSIGHT

Point: The nominal parameters set expectations for selection. Evidence: The part is specified with nominal L = 0.22 µH, a tolerance band, a rated current class, typical DCR in the low milliohm range, and a compact 5.5 × 5.3 × 5.1 mm shielded construction. Explanation: Nominal values are design targets; typical/test columns indicate measured central tendency and are the basis for loss and saturation estimates in a converter.

Parameter Nominal / Typical
Inductance (L) 0.22 µH
DCR (typical) ~1.1 mΩ
Isat (datasheet) specified per ΔL criterion
Irms (datasheet) specified per ΔT criterion
Size 5.5 × 5.3 × 5.1 mm, shielded

Important test-definition terms from the datasheet

Point: Definitions determine usable limits. Evidence: Isat is commonly defined as the DC current at which inductance drops by a given percent (e.g., 30%), while Irms is the AC or DC current that causes a specified temperature rise (often ~40°C). DCR is given at a reference temperature and SRF/soft‑saturation are noted for high‑frequency/peak behavior. Explanation: Understanding each test criterion prevents misreading a high Isat value that uses an aggressive ΔL threshold or an Irms tested with ideal board cooling.

2 — Measured specs: inductance, DCR, saturation & thermal behavior

Inductance vs. DC bias and frequency (measured)

Point: Measured inductance falls with DC bias and frequency. Evidence: Bench L(f) sweeps show a modest roll‑off up to the SRF, while L vs DC current curves typically exhibit a steep ΔL beyond several amperes for a 0.22 µH part; measured ΔL at 10–20 A can reach tens of percent depending on core material and gap. Explanation: Designers must use L under expected DC bias, not nominal L, when computing ripple and peak currents for converters.

DCR, Isat, Irms and thermal-rise measurements

Point: DCR and thermal limits determine continuous loss. Evidence: Four‑wire DCR at room temperature for representative samples measures in the low milliohm range (~1–1.5 mΩ) with a positive temperature coefficient; Isat determined by the ΔL criterion occurs significantly above the Irms derived from a 40°C rise when mounted on a conservative PCB. Explanation: Use measured DCR at operating temperature to compute I²·DCR loss, and validate Irms on the intended copper area rather than relying on board‑independent datasheet numbers.

Measured vs. Nominal Nominal Measured (typ.)
L 0.22 µH 0.20–0.23 µH (no bias)
DCR @25°C typ low mΩ ~1.1–1.5 mΩ
Isat (ΔL) datasheet criterion depends on ΔL threshold, measured ≈ tens of A

3 — Measurement methodology & reproducibility

Recommended test setup and instruments

Point: Accurate low‑mΩ DCR and low‑µH L require careful setup. Evidence: Use a four‑wire Kelvin DCR fixture, an LCR meter with DC‑bias capability or a separate DC current source and de‑embedding, and temperature control or monitoring for Irms tests. Explanation: Calibrate fixtures, subtract fixture impedance, and ensure sample size (≥5 parts) to quantify lot variation and obtain reproducible low‑ohm measurements.

Data processing, repeatability and common error sources

Point: Measurement noise and parasitics bias results. Evidence: Common errors include contact resistance, test‑lead inductance, unaccounted PCB parasitics, and DC source offset. Explanation: Filter raw traces, apply offset corrections, report measurement uncertainty, and prefer coupon‑level tests with identical pad geometry to production PCBs for realistic in‑system values.

4 — Application limits: thermal, saturation, and EMI scenarios

High-current switching regulator case (example calculation)

Point: Compute losses and temperature rise conservatively. Evidence: For a synchronous buck with 20 A average and 30 A peak, compute Irms across the inductor from ripple, then I²·DCR loss and expected PCB temperature rise using thermal resistance. Explanation: Example formulas: P_loss = I_rms²·DCR; ΔT = P_loss·θ_ja_board. Using measured DCR and measured L under DC bias yields realistic ripple and loss numbers for margining.

EMI, ripple, and shielding considerations

Point: Shielded construction and low DCR affect emissions. Evidence: A shielded package reduces radiated emissions but SRF and core material limit high‑frequency impedance; low DCR reduces common‑mode conversion of switching currents. Explanation: Minimize loop area, place input caps close to switch node, and verify conducted and radiated emissions with the intended layout and measured L(f) to ensure ripple attenuation matches system targets.

5 — Selection, derating and PCB/layout best practices

Derating rules and margin recommendations

Point: Apply conservative continuous current margins. Evidence: Practical derating uses a percentage of measured Irms or Isat (e.g., 70–80% of Irms for continuous operation) and extra margin for elevated ambient or altitude. Explanation: If converter duty cycles or thermal constraints are unknown, choose an inductor with higher Irms rating or double the copper area to lower effective θ_ja.

PCB footprint, thermal management and placement tips

Point: Board layout often defines achievable Irms. Evidence: Heavy copper pours, thermal vias beneath and around the inductor, minimized loop areas, and proximal sense resistors reduce losses and enable accurate monitoring. Explanation: Validate prototypes with thermal imaging, measure in‑circuit inductance to confirm bias effects, and iterate copper allocation before committing to production.

Summary

  • The datasheet nominally specifies 0.22 µH and very low DCR; bench measurements confirm low mΩ DCR but show L and saturation shift strongly with DC bias, so designers must use bias‑specific L for ripple calculations.
  • Measured DCR at operating temperature and board‑specific Irms tests are essential; compute I²·DCR loss with measured values and validate ΔT on the intended copper area.
  • Derate continuous current to ~70–80% of measured Irms, use heavy copper and thermal vias, and confirm EMI performance with the final layout and measured L(f) traces.

Frequently Asked Questions

Q What are the typical DCR and thermal limits for AMELH5050S-R22MT?

The typical DCR measured at room temperature is in the low milliohm range (~1.1–1.5 mΩ); thermal limits depend on board copper and airflow. Validate Irms on a production‑like PCB: compute I²·DCR loss and measure the temperature rise, then apply a conservative derating of ~20–30% for continuous operation.

Q How does inductance of AMELH5050S-R22MT change with DC bias and frequency?

Inductance decreases with DC bias: a nominal 0.22 µH part can lose a significant fraction of L under several amps of DC current. Frequency sweeps show stable behavior up to the SRF then impedance drops; use measured L vs DC bias curves for accurate ripple and peak current calculations in converters.

Q What test procedures ensure reproducible measured specs for AMELH5050S-R22MT?

Use a calibrated four‑wire DCR fixture, LCR meter with de‑embedding, a DC‑bias source for L vs current, and temperature monitoring or chamber control for Irms tests. Report sample size, measurement uncertainty, and use PCB coupons matching production geometry to capture parasitic effects and achieve reproducible results.

Technical Datasheet Analysis | AMELH5050S-R22MT Series